Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

1998-06-16

2000-12-05

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438308, 438486, 438482, 438471, 438476, H01L 2100

Patent

active

061565903

ABSTRACT:
In producing TFT by crystallizing an amorphous silicon film by the action of nickel, the influence of nickel on the TFT produced is inhibited. A mask 104 is formed over an amorphous silicon film 102, and a nickel-containing solution is applied thereover. In that condition, nickel is kept in contact with the surface of the amorphous silicon film at the opening 103 of the mask. Then, this is heated to crystallize the amorphous silicon film. Next, a phosphorus-containing solution is applied thereto, so that phosphorus is introduced into the silicon film in the region of the opening 103. This is again heated, whereby nickel is gettered in the region into which phosphorus has been introduced. In this process, the nickel concentration in the silicon film is reduced.

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Van Zant, Peter Microchip Fabrication, Third Ed. "Crystal Growth and Wafer Preparation" pp:50-64, 1997.

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