Method of forming insulating material between components of an i

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427344, 427387, 4274192, 438409, 438623, 438787, 438960, B05D 512, H01L 2176

Patent

active

061563749

ABSTRACT:
The invention includes a method of forming an insulating material between components of an integrated circuit. A pair of spaced electrical components are provided over a substrate. Polysilicon is chemical vapor deposited over, between, and against the pair of electrical components. Cavities are formed within the polysilicon to enhance porosity of the polysilicon. After the cavities are formed, at least some of the polysilicon is transformed into porous silicon dioxide.

REFERENCES:
patent: 3919060 (1975-11-01), Pogge et al.
patent: 3954523 (1976-05-01), Magdo et al.
patent: 3979230 (1976-09-01), Anthony et al.
patent: 3998662 (1976-12-01), Anthony et al.
patent: 4063901 (1977-12-01), Shiba
patent: 4180416 (1979-12-01), Brock
patent: 4561173 (1985-12-01), Te Velde
patent: 5023200 (1991-06-01), Blewer et al.
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5141896 (1992-08-01), Katoh
patent: 5171713 (1992-12-01), Matthews
patent: 5461003 (1995-10-01), Havemann et al.
patent: 5470801 (1995-11-01), Kapoor et al.
patent: 5488015 (1996-01-01), Havermann et al.
patent: 5496773 (1996-03-01), Rhodes et al.
patent: 5525857 (1996-06-01), Gnade et al.
patent: 5527737 (1996-06-01), Jeng
patent: 5554567 (1996-09-01), Wang
patent: 5583078 (1996-12-01), Osenbach
patent: 5599745 (1997-02-01), Reinberg
patent: 5629238 (1997-05-01), Choi et al.
patent: 5670828 (1997-09-01), Cheung et al.
patent: 5691565 (1997-11-01), Manning
patent: 5691573 (1997-11-01), Avanzino et al.
patent: 5736425 (1998-04-01), Smith et al.
patent: 5744399 (1998-04-01), Rostoker et al.
patent: 5773363 (1998-06-01), Derderian et al.
patent: 5804508 (1998-09-01), Gnade et al.
patent: 5807607 (1998-09-01), Smith et al.
patent: 5861345 (1999-01-01), Chou et al.
patent: 5882978 (1999-03-01), Srinivasan et al.
patent: 5883014 (1999-03-01), Chen et al.
patent: 5950102 (1999-09-01), Lee
patent: 6001747 (1999-12-01), Annapragada
patent: 6028015 (2000-02-01), Wang et al.
Anderson, R.C. et al., "porous Polycrystalline Silicon: A new material for MEMS:", Jnl. of Microelectromechanical Systems, vol. 3, No. 1, pp. 10-18, Mar. 1994.
Abstract: Anderson, R.C. et al., "Porous Polycrystalline Silicon: A New Material For MEMS", Jnl. of Microelectromechanical Systems (Mar. 1994), vol. 3, No. 1, pp. 10-18.
Anderson, R.C. et al., "Porous polycrystalline silicon: A new material for MEMS", Journal of Microelectromechanical Systems, vol. 3, No. 1, pp. 10-18.
Togo, M., "A Gate-side Air-gap Structure (GAS) to Reduce the Parasitic Capacitance in MOSFETs", 1996 Sympos. on VLSI Technology Digest of Technical Papers, IEEE 1996, pp. 38-39.
Anand, M.B., "NURA: A Feasible, Gas-Dielectric Interconnect Process", 1996 Sympos. on VLSI Technology Digest of Technical Papers, IEEE 1996, pp 82-83.
Watanabe, H., "A Novel Stacked Capacitor with Porous-Si Electrodes for High Density DRAMs", Microelectronics Research Laboratories, NEC Corp., date unknown, pp. 17-18.
Homma, Tetsuya, "Low Dielectric Constant Materials and Methods for Interlayer Dielectric Films in Ultralarge-Scale Integrated Circuit Multilevel Interconnections", Materials Science & Engineering., R23, pp. 243-285 (1998).
Abstract: Townsend, P.H., et al., "SiLK Polymer Coating With Low Dielectric Constant and High Thermal Stability for ULSI Interlayer Dielectric", The Dow Chemical Company, Midland, MI, 9 Pages, (Undated).
Product Brochure and Material Safety Data Sheet, "Interlayer Dielectric", JSR Microelectronics, 12 Pages (1997) No Month.
U.S. application No. 08/947,847, Juengling et al., filed Oct. 9, 1997.
Singer, Peter, "The New Low-k Candidate: It's a Gas", (Technology News/Wafer Processing) Semiconductor International, 1 Page, (Mar. 1989).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming insulating material between components of an i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming insulating material between components of an i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming insulating material between components of an i will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-959238

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.