Method for fabricating a capacitor for a semiconductor memory co

Details Method for fabricating a capacitor for a semiconductor memory co Method for fabricating a capacitor for a semiconductor memory co

1999-04-30

2000-09-12

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438719, 438734, 438754, 438756, H01L 2100

Patent

active

061177903

ABSTRACT:
A method for fabricating a capacitor for a semiconductor memory configuration. In this case, a selectively etchable material is applied to a conductive support, which is connected to a semiconductor body via a contact hole in an insulator layer, and patterned. A first conductive layer is applied thereon and patterned. A hole is introduced into the first conductive layer, through which hole the selectively etchable material is etched out. A cavity is produced under the first conductive layer in the process. The inner surface of the cavity and the outer surface of the first conductive layer are provided with a dielectric layer, to which a second conductive layer is applied and patterned.

REFERENCES:
patent: 5095346 (1992-03-01), Bae et al.
patent: 5102820 (1992-04-01), Chiba
patent: 5196364 (1993-03-01), Fazan et al.
patent: 5459094 (1995-10-01), Jun
patent: 5478770 (1995-12-01), Kim
Japanese Patent Abstract No. 08319160 (Katsumi), dated Dec. 3, 1996.
Japanese Patent Abstract No. 10012844 (Tokuo), dated Jan. 16, 1998.
Japanese Patent Abstract No. 10012837 (Tomoshi), dated Jan. 16, 1998.
"A Deep-trenched Capacitor Technology for 4 Mega Bit Dynamic RAM", K. Yamada et al., VLSI Reseach Center, Toshiba Corporation, Japan, 1985, pp. 702-705.

Affiliated with

Also associated with

Rating

Method for fabricating a capacitor for a semiconductor memory co does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a capacitor for a semiconductor memory co, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a capacitor for a semiconductor memory co will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-95800