Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-25
1999-06-01
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257306, 257307, H01L 27108
Patent
active
059090456
ABSTRACT:
A semiconductor memory device such as a DRAM device with a tree-type capacitor having an increased charge storage area includes a substrate, a transfer transistor formed on the substrate and having a drain region, and the tree-type capacitor electrically connected to the drain region. The tree-type capacitor includes a storage electrode shaped in a tree-structure having a trunk-like conductive layer and at least a branch-like conductive layer branching out from the trunk-like conductive layer. A dielectric layer covers the storage electrode and an overlaying conductive layer covers the dielectric layer. The trunk-like conductive layer has one end electrically connected to the drain region of the transfer transistor. The trunk-like conductive layer and the branch-like conductive layer in combination form the storage electrode of the data storage capacitor of the semiconductor memory device and the overlaying conductive layer serves as an opposed electrode to the storage electrode.
REFERENCES:
patent: 4974040 (1990-11-01), Taguchi et al.
patent: 5071783 (1991-12-01), Taguchi et al.
patent: 5077688 (1991-12-01), Kumanoya et al.
patent: 5089869 (1992-02-01), Matsuo et al.
patent: 5102820 (1992-04-01), Chiba
patent: 5126810 (1992-06-01), Gotou
patent: 5142639 (1992-08-01), Kohyama et al.
patent: 5155657 (1992-10-01), Oehrlein et al.
patent: 5158905 (1992-10-01), Ahn
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5172201 (1992-12-01), Suizu
patent: 5196365 (1993-03-01), Gotou
patent: 5206787 (1993-04-01), Fujioka
patent: 5266512 (1993-11-01), Kirsch
patent: 5274258 (1993-12-01), Ahn
patent: 5338955 (1994-08-01), Tamura et al.
patent: 5354704 (1994-10-01), Yang et al.
patent: 5371701 (1994-12-01), Lee et al.
patent: 5389568 (1995-02-01), Yun
patent: 5399518 (1995-03-01), Sim et al.
patent: 5438011 (1995-08-01), Blalock et al.
patent: 5443993 (1995-08-01), Park et al.
patent: 5453633 (1995-09-01), Yun
patent: 5478770 (1995-12-01), Kim
patent: 5508222 (1996-04-01), Sakae
patent: 5521419 (1996-05-01), Wakamiya et al.
patent: 5523542 (1996-06-01), Chen et al.
patent: 5550080 (1996-08-01), Kim
patent: 5561309 (1996-10-01), Cho et al.
patent: 5561310 (1996-10-01), Woo et al.
patent: 5572053 (1996-11-01), Ema
patent: 5595931 (1997-01-01), Kim
patent: 5696395 (1997-12-01), Tseng
Ema et al., "3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMS", International Electron Devices Meeting, pp. 592-595, Dec. 1988.
Wakamiya et al., "Novel Stacked Capacitor Cell for 64-Mb DRAM", 1989 Symposium on VLSI Technology Digest of Technical Papers, pp. 69-70.
Crane Sara
United Microelectronics Corporation
LandOfFree
Semiconductor memory device having tree-type capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device having tree-type capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having tree-type capacitor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-956533