Soft error immune CMOS static RAM cell

Details Soft error immune CMOS static RAM cell Soft error immune CMOS static RAM cell

1993-04-05

1994-08-16

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257429, 257544, 257903, H01L 2702

Patent

active

053389638

ABSTRACT:
Soft error immunity of a storage cell is greatly increased by division of a storage node into at least two portions and location of those portions on opposite sides of an isolation structure, such as a well of a conductivity type opposite to that of the substrate in which transistors of the memory cell may also be formed. The isolation structure thus limits collection of charge to only one of the portions of the storage node and reduces charge collection efficiency to a level where a critical amount of charge cannot be collected in all but a statistically negligible number of cases when such charge is engendered by impingement by ionizing radiation, such as energetic alpha particles. The layout of the memory cell having this feature also advantageously provides a simplified topology for the formation of additional ports comprising word line access transistors and bit lines.

REFERENCES:
patent: 4287574 (1981-09-01), Uchida
patent: 4524377 (1985-06-01), Eguchi
patent: 5189640 (1993-02-01), Huard

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