Semiconductor memory device having an insulating film and a trap

Details Semiconductor memory device having an insulating film and a trap Semiconductor memory device having an insulating film and a trap

1993-02-03

1994-08-16

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257324, 257316, H01L 2968

Patent

active

053389549

ABSTRACT:
A semiconductor memory device and a method for producing the same are provided, wherein memory cells, in each of which a MONOS- or MNOS-type memory transistor is combined with an enhancement transistor in a reduced cell area, are arranged in a matrix configuration. With such a device and a method, an extremely high integration of memory cells can be realized with a reduced production cost. The semiconductor memory device of the present invention includes a gate insulating film and a trap film which are joinedly formed on a channel region of a semiconductor substrate of a first conductive type. A gate electrode extends over the two films. Source/drain regions are formed on opposite sides of the gate electrode

REFERENCES:
patent: 4616340 (1986-10-01), Hayashi et al.

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