Non-volatile memory

Details Non-volatile memory Non-volatile memory

1993-09-13

1994-08-16

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257319, 257321, 257390, 257903, H01L 2968

Patent

active

053389522

ABSTRACT:
A non-volatile memory having a memory cell, the memory cell including a semiconductor substrate having first and second impurity diffusion layers, a first insulating film provided on the semiconductor substrate between the first and second impurity diffusion layers and on the first impurity diffusion layer side, a tunnel dielectric film extended to a second impurity diffusion layer region which is provided opposite to the first impurity diffusion layer side, a first electrode formed on the first insulating film, a floating gate formed on the tunnel dielectric film and on the side wall of the first electrode through an insulating film, and a second electrode provided at least on the floating gate through a second insulating film so as to control the potential of the floating gate, wherein channel hot electrons can be injected from the inversion layer formed under the first electrode, which is controlled by the first electrode, to the floating gate.

REFERENCES:
patent: 4616340 (1986-10-01), Hayashi et al.
patent: 4754320 (1988-06-01), Mizutani et al.
patent: 4882707 (1989-11-01), Mizutani
patent: 5027185 (1991-06-01), Liauh
patent: 5041886 (1991-08-01), Lee
patent: 5051793 (1991-09-01), Wang

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