Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1992-06-26
1994-08-16
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429813, 20429821, C23C 1434
Patent
active
053384253
ABSTRACT:
The present invention relates to a target unit including a basic body and a target layer mainly comprising Si alloy disposed on an outer peripheral surface of the basic body by a hard-facing method. A target unit in accordance with the present invention has an interposed layer between a basic body and a target layer, in which one side thereof is strongly attached to a peripheral surface of the basic body, while other side thereof is strongly attached to an inner surface of the target layer. Also, a method in accordance with the present invention comprises the steps of: preparing a basic body in the form of a cylinder; applying an interposed layer on a peripheral surface of said basic body by means of hard-facing; and further applying a target layer on a peripheral surface of said interposed layer by means of hard-facing.
REFERENCES:
patent: 3620957 (1971-11-01), Emery et al.
patent: 4519885 (1985-05-01), Innis
patent: 4904362 (1990-02-01), Gaertner et al.
patent: 4966676 (1990-10-01), Fukasawa et al.
patent: 5118661 (1992-06-01), Maeda
Research Disclosure, No. 300, Apr. 1, 1989, p. 286, "Process For Fabricating Sputtering Targets".
Patent Abstracts of Japan, vol. 6, No. 250 (C-139)(1128), & JP-A-57 145 981, Sep. 9, 1982, Katsuya Okumura, "Target For Sputtering Device".
Patent Abstracts of Japan, vol. 10, No. 328 (C-383)(2384), & JP-A-61 136 673, Jun. 24, 1986, Kikuo Suzuki, "Target Material For Sputtering".
Patent Abstracts of Japan, vol. 13, No. 423 (C-638)(3771), & JP-A-11 62 762, Jun. 27, 1989, Kenichi Kubo, "Sputtering Device".
Mashima Munenori
Mishima Akifumi
Tamura Jun
Mitsubishi Materials Corporation
Nguyen Nam
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