Method of forming a semiconductor device

Details Method of forming a semiconductor device Method of forming a semiconductor device

1993-10-01

1994-08-16

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156904, 430313, 430318, 437 51, 437180, 437245, H01L 21306, B44C 122, C23F 100

Patent

active

053383974

ABSTRACT:
The present invention provides a method of forming a semiconductor device. A layer of photoresist is applied to a semiconductor wafer. A first mask is used to protect a first portion of the photoresist while a second portion of the photoresist is exposed. A second mask is used to expose a third portion of the photoresist wherein the third portion of the photoresist includes part of the first portion of the photoresist. The photoresist is developed to form a photoresist mask.

REFERENCES:
patent: 5100508 (1992-03-01), Yoshida et al.
patent: 5221429 (1993-06-01), Makuta
James B. Brinton, "E-Beam, Ultraviolet Photolithography Join In Single-Resist Step For Precision, Speed", Electronics, pp. 40-41, Nov. 30, 1981.

Affiliated with

Also associated with

Rating

Method of forming a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-949074