Method for the local removal of UV-transparent insulation layers

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156663, 437173, 437187, 437238, H01L 21441, H01L 21306, H01L 21268

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active

053383931

ABSTRACT:
UV-transparent insulating layers, particularly silicon oxide, over conductive structures on a semiconductor substrate, for example an aluminum interconnect, are locally removed in order to expose interconnects for measuring and testing purposes, for repair, or for other uses. For this purpose, the semiconductor substrate is introduced into a vacuum chamber into which a gaseous, layer-forming compound, particularly a metal carbonyl, is admitted with a carrier gas, and the light of a pulsed UV laser is directed onto the location to be uncovered. No highly toxic or corrosive halogen compounds are required. After the removal of the insulating layer, a metal layer can be locally deposited immediately subsequently thereto on the exposed interconnect from the gaseous metal carbonyl with the same process. A good contact for measuring tips, for example, thus being enabled in a simple way.

REFERENCES:
patent: 4668337 (1987-05-01), Sekine
patent: 4693779 (1987-09-01), Okuhira et al.
patent: 4868068 (1989-09-01), Yamaguchi et al.
patent: 4885047 (1989-12-01), Urm et al.
SPIE vol. 459 Laser Assisted Deposition, Etching and Doping, (1984), "UV Laser-Induced Radical-Etching for Microelectronic Processing", by G. L. Loper et al, pp. 121-127.
Solid State Technology, Jun., 1985, "Laser-Induced Chemical Vapor Deposition", by Raj Solanki et al, pp. 220-227.

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