Trench EPROM

Details Trench EPROM Trench EPROM

1995-06-07

1997-01-28

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

36518501, 36518518, 257315, G11C 1124, G11C 1134

Patent

active

055983677

ABSTRACT:
A two-device nonvolatile memory cell is described. The cell comprises a planar FET and a vertical FET in series. The vertical FET has a floating gate that is predominantly capacitively coupled to a buried n well that serves as the control electrode. The structure is very similar to a trench DRAM cell, and the nonvolatile memory cell can be integrated onto a DRAM chip.

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Y. S. Hisamune et al., "A 3.6 .mu.m.sup.2 Memory Cell Structure for 16MB EPROMS" 1989 IEEE, 25.2.1-25.2.4.
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S. Aritome et al. "A Reliable Bi-Polarity Write/Erase Technology in Flash EEPROMs" 1990 IEEE, 5.6.1-5.6.4.

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