Semiconductor integrated circuit device and method of manufactur

Details Semiconductor integrated circuit device and method of manufactur Semiconductor integrated circuit device and method of manufactur

1995-02-03

1997-01-28

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257393, 257903, H01L 2776, H01L 2711

Patent

active

055980201

ABSTRACT:
A semiconductor integrated circuit device includes a first conductor formed on a main-surface of a semiconductor substrate with an insulating film therebetween, and a second conductor formed with an insulating film therebetween so as to be placed near one side of the first conductor and to have its one end extended over a top surface of the one side of the first conductor. The semiconductor integrated circuit device further includes an impurity diffusion layer at the main surface of the semiconductor substrate under a region where first and second conductors are close to each other. In accordance with this structure, higher degree of integration of a memory cell can be readily achieved by a relatively simple manufacturing process. Such a structure can be manufactured by forming the impurity diffusion layer at the surface of the semiconductor substrate, forming first conductor by patterning a first conductor layer, forming a second conductor layer, and forming a second conductor by patterning the second conductor layer.

REFERENCES:
patent: 5198691 (1993-03-01), Tarng
patent: 5319245 (1994-06-01), Chen et al.
patent: 5373192 (1994-12-01), Eguchi
"A high density SRAM cell using poly-Si pMOS FET", Yamanaka et al., ICD89-26, pp. 1-6.
"A 7.5-ns 32K .times. 8 CMOS SRAM", Hiroaki Okuyama et al., IEEE Journal of Solid-State Circuits, vol. 23, No. 5. Oct. 1988, pp. 1054-1058.

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device and method of manufactur does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device and method of manufactur, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device and method of manufactur will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-942930