Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-04-06
1997-01-28
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257520, 257640, H01L 2976
Patent
active
055980198
ABSTRACT:
A trench for element isolation is formed on the main surface of a semiconductor substrate. A conductive layer is formed in the trench, electrically connected to the semiconductor substrate. Oxide films and a dielectric film is formed between the conductive layer and the sidewall of the trench. A field oxide film is formed on the conductive layer. The dielectric film extends from the sidewall of the field oxide film to a region between the sidewall of the trench and the conductive layer. Consequently, a semiconductor device having an element isolation structure of superior isolation capability and high reliability can be obtained.
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Komori Shigeki
Yamaguchi Takehisa
Carroll J.
Mitsubishi Denki & Kabushiki Kaisha
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