Method and structure for improving data retention in a DRAM

Static information storage and retrieval – Systems using particular element – Capacitors

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36518901, G11C 1300

Patent

active

06021063&

ABSTRACT:
A DRAM memory cell with improved data retention includes an access transistor, a capacitor, and a configurable voltage generator. The configurable voltage generator provides a cell plate voltage of 1/2VDD during an active mode and VDD during a non-active mode. The higher cell plate voltage during the non-active mode provides strong wordline disturbance immunity without negatively biasing the wordline. Because the wordline is not negatively biased, power dissipation caused by cross-fails are reduced.

REFERENCES:
patent: 3387286 (1968-06-01), Dennard

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