Method of fabricating transducer structure employing vertically

Details Method of fabricating transducer structure employing vertically Method of fabricating transducer structure employing vertically

1982-07-19

1984-04-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156657, 1566591, 156662, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044432933

ABSTRACT:
There is disclosed a rectangular diaphragm employing a quasi rectangular active area. The diaphragm as configured has an aspect ratio which is the length to width ratio of greater than 3:1. The active area of the diaphragm, which is the area which most readily deflects upon application of a force to the diaphragm, is formed by an anisotropic etching technique to provide steep vertical sidewalls. The diaphragm structure thus described exhibits as a response to an applied force or pressure, a maximum longitudinal stress and a minimum transverse stress and can accommodate piezoresistive elements located within the active area of the diaphragm.

REFERENCES:
patent: 3936329 (1976-02-01), Kendall et al.
patent: 4102732 (1978-07-01), Kato et al.
patent: 4293373 (1981-10-01), Greenwood
IEEE Transactions on Electron Devices, vol. ED-23, No. 6, Jun. 1976, Schottky Diodes and Other Devices on Thin Silion by C. L. Huang et al., pp. 579-583.
ISA Transactions, vol. 17, No. 1, pp. 83-87, 1978, A Diffused Silicon Pressure Transducer with Stress Concentrated at Transverse Gages by L. Bruce Wilner.

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