Method for etching semiconductor wafers

Details Method for etching semiconductor wafers Method for etching semiconductor wafers

1996-01-29

1997-01-28

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 1566621, 216 64, 216 67, H01L 213065

Patent

active

055974449

ABSTRACT:
Disclosed is a semiconductor etching method comprising exposing the wafer surface, in a plasma etching apparatus, to a radio-frequency plasma comprising a mixture of a noble gas and a saturated or unsaturated reduced carbon compound selected from the group consisting of acetylene (C.sub.2 H.sub.2), benzene (C.sub.6 H.sub.6), graphite or buckminsterfullerene (C.sub.60) and a halogen compound selected from the group consisting of fluorine, chlorine, bromine, hydrogen chloride, hydrogen fluoride, hydrogen bromide, sulphur hexafluoride and nitrogen trifluoride.

REFERENCES:
patent: 4162185 (1979-07-01), Coburn et al.
patent: 5405491 (1995-04-01), Shahvandi et al.
patent: 5409563 (1995-04-01), Cathey
patent: 5419804 (1995-05-01), Ojha et al.
patent: 5498312 (1996-03-01), Laermer et al.

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