High voltage thin film transistor with second control electrode

Details High voltage thin film transistor with second control electrode High voltage thin film transistor with second control electrode

1989-07-28

1991-01-08

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 4, 357 15, 357 59, 357 2314, 307304, H01L 2701, H01L 2713, H01L 2978, H01L 2712

Patent

active

049840410

ABSTRACT:
A high voltage thin film transistor comprising an amorphous semiconductor charge transport layer, laterally disposed source and drain electrodes, a first control electrode with one edge laterally overlapping the source electrode and an other edge laterally spaced from the drain electrode. A source of high potential is applied to the drain electrode and a source of low potential is applied to the first control electrode in a time varying manner so as to form an accumulation channel in the charge transport layer, opposite to the first control electrode. Device performance is improved by including a second control electrode disposed in the same plane as the first control electrode and biased for preventing the formation of defects within the charge transport layer adjacent the other edge.

REFERENCES:
patent: 4598305 (1986-07-01), Chiang
patent: 4716446 (1987-12-01), Esser et al.
patent: 4752814 (1988-06-01), Tuan
patent: 4882295 (1989-11-01), Czubatyj et al.
Martin et al., "Enhancement of Performance and Reliability of Amorphous Silicon High Voltage Thin Film Transistors by Use of Field Plates", IEDM 1989, pp. 341-364.
Mimura et al., High Performance Low-Temp Poly-Si N Channel TFT for LCD, 2/1989, pp. 351-358.
Unagami, High-Voltage Poly-Si TFT w/Mutichannel Structure, 12-1988, IEEE, pp. 2363-2367.

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