Method of recovering alignment marks after chemical mechanical p

Details Method of recovering alignment marks after chemical mechanical p Method of recovering alignment marks after chemical mechanical p

1996-10-31

2000-02-01

Codd, Bernard

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438700, 438704, 438706, 438712, 438723, 216 18, 216 39, 430312, 430313, 430314, H01L 23544, H01L 2164

Patent

active

060202637

ABSTRACT:
This invention describes a method of forming alignment marks which will be preserved after contact holes in a dielectric have been filled with barrier metal and contact metal and the wafer has been planarized. The alignment marks are formed by filling alignment lines, formed in the dielectric when the contact holes are formed, with barrier metal and contact metal. The alignment lines and contact holes are filled with metal at the same time. After the wafer has been planarized, using a method such as chemical mechanical polishing, a small thickness of the dielectric is etched back using vertical dry anisotropic etching which will not remove either the contact metal or barrier metal. This leaves barrier metal and contact metal extending above the plane of the dielectric forming alignment marks. These alignment marks are preserved after subsequent processing steps, such as deposition of a layer of electrode metal.

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