Method of fabricating semiconductor devices with contact holes

Details Method of fabricating semiconductor devices with contact holes Method of fabricating semiconductor devices with contact holes

1996-11-21

2000-02-01

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438798, 438906, H01L 2144

Patent

active

060202548

ABSTRACT:
A method of fabricating semiconductor devices which satisfactorily removes native oxide films and damaged layers which are formed on the surfaces of the conductor layers in the silicon substrates when contact holes are opened, and which tend to increase the contact resistances. A thin oxide film 5 is formed on the surface of a conductor region 3 in a silicon substrate 1 which is exposed at the bottom of the contact hole, and the oxide film 5 is then etched off with hydrogen-containing plasma. The native oxide film and/or damaged layer 3a, and the etching residue on the surface of the conduct layer 3 are satisfactorily removed, thus allowing provision of a contact structure with a low contact resistance regardless of whether the conductor type is P or N, without increasing the diameter of the contact hole.

REFERENCES:
patent: 4517225 (1985-05-01), Broadbent
patent: 5620559 (1997-04-01), Kikuchi
Y. Harada et al., "Electrical Contact Resistance in ECRCVD-TiN/Si Structure", Technical Report of IEICE, SDM92-103, Nov. 1992, pp. 61-66.
I. Park et al., "The evaluation of in-situ contact cleaning using Ar ECR plasma for low contact resistance at deep sub-micron contact holes", Extended Abstracts (The 42nd Spring Meeting, 1995); The Japan Society of Applied Physics and Related Societies, p. 736.

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