Method of forming patterns

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156628, 156646, 1566591, 156668, 156904, 427 431, 430313, B44C 122, B29C 3700

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active

051239981

ABSTRACT:
A method of forming patterns for providing satisfactory pattern shapes of high resolution and high sensitivity is disclosed. A resin film comprising hydroxyl groups is formed on a substrate. Deep UV light selectively irradiates the resin film using a desired mask under nitrogen atmospherre. The surface of the non-exposed portion is selectively silylated by hexamethyldisilazane followed by dry development using reactive ion etching comprising O.sub.2 gas. In accordance with this method, photo irradiation is carried out under inert gas atmosphere so that crosslinking reaction of the resin film proceeds significantly, with the hydroxyl groups concentration greatly reduced. As a result, there is selectivity in silylation reaction between the exposed portion and the non-exposed portion. The exposed portion and the non-exposed portion is precisely distinguished by dry development. Accordingly, resist patterns of high resolution can be obtained.

REFERENCES:
patent: 4613398 (1986-09-01), Chiong et al.
patent: 4751170 (1988-06-01), Mimura et al.
patent: 4908298 (1990-03-01), Hefferon et al.
Nalamasu et al., "A Novel Photooxidative Scheme for Imaging at Polymer Surfaces", SPIE vol. 1086 Advances in Resist Technology and Processing VI (1989), pp. 186-206.
Schellekens et al., "Single Level Dry Developable Resist Systems, Based on Gas Phase Silylation", SPIE vol. 1086 Advances in Resist Technology and Processing (1989), pp. 220-228.
Coopmans et al., "DESIRE: A Novel Dry Developed Resist System", SPIE vol. 631 Advances in Resist Technology and Processing (1986), pp. 34-39.

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