Superconducting magnetic memory device having intentionally indu

Static information storage and retrieval – Systems using particular element – Superconductive

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365162, 505831, 505832, G11C 1144

Patent

active

053771419

ABSTRACT:
A new type of superconducting memory is described. The composition of superconducting ceramic material used in the memory has been altered in order to expedite the formation of non-superconducting regions formed of grain boundaries. Non-superconducting regions may also be formed of lattice defects. Magnetic flux is trapped within the non-superconducting regions (grain boundaries or lattice defects). Information can be stored in terms of whether or not magnetic flux is trapped.

REFERENCES:
patent: 3995278 (1976-11-01), Young
patent: 4082991 (1978-04-01), Constant
patent: 4365317 (1982-12-01), Gheewala
patent: 4601015 (1986-07-01), Ishida
patent: 4943556 (1990-07-01), Szu
patent: 5011817 (1991-04-01), Hidaka et al.
patent: 5039656 (1991-08-01), Hidaka et al.
patent: 5070070 (1991-12-01), Askew et al.

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