Semiconductor memory and data processing device

Static information storage and retrieval – Systems using particular element – Flip-flop

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36518901, 365226, G11C 700

Patent

active

053771389

ABSTRACT:
In a peripheral circuit of a static RAM composed of memory cells of polysilicon high resistance type, there is provided a word line potential deviating circuit which sets the potential of a selected word line during writing operation to be the potential Vvol, the value of which is higher than that of a supplied potential Vdd. The word line potential deviating circuit includes a ring-oscillator circuit, a deviation timing signal generating circuit, a step-up gate control signal generating circuit, a step-up potential generating circuit, a word line supplied potential mixing circuit, and a word line potential supply control circuit.

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patent: 4692904 (1987-09-01), Sato et al.
patent: 4751683 (1988-06-01), Wada et al.
patent: 4901284 (1990-02-01), Ochii et al.
patent: 4972375 (1990-11-01), Ueno et al.
patent: 5047979 (1991-09-01), Leung

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