Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1992-11-16

1994-12-27

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 69, 437 70, 437 72, H01L 21312

Patent

active

053762304

ABSTRACT:
After a field oxide is formed, only a bird's beak is removed by wet etching while a resist which exposes only the bird's beak is used as a mask. When the field oxide is formed, a latent stress acts on a semiconductor substrate under the bird's beak. Since the latent stress is released when the bird's beak is removed, crystal defects do not occur. Since the mask is used, the thickness of the field oxide except for the bird's beak is not decreased. In addition, since the wet etching is performed, crystal defects do not occur during the removal of the bird's beak.

REFERENCES:
patent: 4426766 (1984-01-01), Lee
patent: 4435225 (1984-03-01), Shideler et al.
patent: 4536947 (1985-08-01), Bohr et al.
patent: 4611386 (1986-09-01), Goto
patent: 4897364 (1990-01-01), Nguyen et al.
patent: 5019526 (1991-05-01), Yamane et al.
patent: 5065218 (1991-11-01), Arimoto et al.

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