Fishing – trapping – and vermin destroying
Patent
1993-09-07
1996-03-26
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437195, 437189, 437192, H01L 2144
Patent
active
055020046
ABSTRACT:
In a method for forming a metal wiring layer of a semiconductor device an insulating layer is formed on a semiconductor substrate having impurity-doped regions. A contact hole is formed in the insulating layer to expose an impurity-doped semiconductor region. Thereafter, a diffusion barrier layer is formed on the inner surface of the contact holes and on the surface of the semiconductor substrate exposed by the contact holes. The diffusion barrier layer is heat-treated for two minutes to one hour in a vacuum at a temperature of 450.degree. C. to 650.degree. C. Then, a metal wiring layer of a semiconductor device is formed on the diffusion barrier layer.
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Gurley Lynn A.
Hearn Brian E.
Samsung Electronics Co,. Ltd.
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