Non-uniformly nitrided gate oxide and method

Details Non-uniformly nitrided gate oxide and method Non-uniformly nitrided gate oxide and method

1997-06-27

1998-09-15

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, 438287, 438585, H01L 2976

Patent

active

058083480

ABSTRACT:
A semiconductor device which includes a polysilicon gate separated from a semiconductor substrate by a re-oxidized nitrided oxide film in which the concentration of re-oxidized nitride in the film underlying the gate is non-uniform and in which the concentration of nitrogen in the substrate and the re-oxidized nitrided oxide along their interface and underlying the gate is non-uniform.
Methods are disclosed of providing the non-uniform concentrations by incomplete shielding of the oxide by the gate during the nitriding and re-oxidizing process.

REFERENCES:
patent: 4704302 (1987-11-01), Bruel et al.
patent: 5714788 (1998-02-01), Ngaoaram

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