Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-05-05
1998-09-15
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257 80, H01L 29788
Patent
active
058083367
ABSTRACT:
A storage device comprises, on a substrate, a first semiconductor region of one conductivity type, second and third semiconductor regions of a conductivity type opposite to the one conductivity type contiguous to the first semiconductor region, a first electrode which is formed on a region for isolating the second and third semiconductor regions via an insulating layer, and a second electrode formed on the first electrode, but spaced therefrom by an insulating layer. The resistance between the first and second electrodes is selectively changed from a high-resistance state to a low-resistance state is needed, to record a bit of data.
REFERENCES:
patent: 3422321 (1969-01-01), Tombs
patent: 4332077 (1982-06-01), Hsu
patent: 5200636 (1993-04-01), Usemura et al.
patent: 5331197 (1994-07-01), Miyawaki et al.
patent: 5420756 (1995-05-01), Katsumata et al.
patent: 5493139 (1996-02-01), Akiyama et al.
IEEE Electron Device Letters, vol. 13, No. 1, Jan. 1992 New York, USA, pp. 53-55, XP 000240817, Kueing-Long Chen et al., "A Sublithographic Antifuse Structure for Field-Programmable Gate Array Applications".
Canon Kabushiki Kaisha
Prenty Mark V.
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