Semiconductor memory device having reduced parasitic capacities

Details Semiconductor memory device having reduced parasitic capacities Semiconductor memory device having reduced parasitic capacities

1994-11-14

1998-09-15

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257488, H01L 27108

Patent

active

058083340

ABSTRACT:
In a semiconductor memory device having a memory cell array and sense amplifiers connected by bit lines, a conductive shield plate is arranged over the bit lines and between the memory cell array and the sense amplifiers.

REFERENCES:
patent: 3811076 (1974-05-01), Smith, Jr.
patent: 4780852 (1988-10-01), Kajigaya et al.
patent: 4953126 (1990-08-01), Ema
patent: 4958222 (1990-09-01), Takakura et al.
patent: 5057887 (1991-10-01), Yashiro et al.
Garnache, R. "Insulated Gate FET Memory Chip . . . " IBM Tech. Disc. Bull. vol. 17, No. 1 Jun, 1974, p. 17.

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