Dram having pip capacitor inside a trench

Details Dram having pip capacitor inside a trench Dram having pip capacitor inside a trench

1987-12-18

1989-08-08

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365182, 357 55, 357236, G11C 1124, G11C 1134, H01L 2906, H01L 2978

Patent

active

048559520

ABSTRACT:
A semiconductor memory device comprises a silicon substrate; an insulating layer formed over this substrate comprising a first portion and a second portion; at least one monocrystalline silicon island formed within the insulating layer, separated from the silicon substrate by the first portion of the insulating layer and from one another by the second portion of the insulating layer, with at least one trench having a wall defined by a side of the at least one monocrystalline silicon island and extending into the first portion of the insulating layer; a lower electrode film formed inside each of the at least one trench in contact with the at least one monocrystalline silicon island; a dielectric film formed on the lower electrode; and an upper electrode film formed on the dielectric film. Information is stored as charge in a capacitor consisting of the lower electrode film, the dielectric layer, and the upper electrode film.

REFERENCES:
patent: 4462048 (1984-07-01), Ho et al.
patent: 4566025 (1986-01-01), Tastrzebski et al.
patent: 4577395 (1986-03-01), Shibata
patent: 4688064 (1987-08-01), Ogura et al.
patent: 4717942 (1988-01-01), Nakamura et al.
patent: 4737838 (1988-04-01), Watanabe
"Scaling Consideration and Dielectric Breakdown Improvement of Corrugated Capacitor Cell (ccc) For Future DRAM" Sunami et al. IEDM 84, pp. 232-235 (1984).

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