Method for improvement of TiN CVD film quality

Details Method for improvement of TiN CVD film quality Method for improvement of TiN CVD film quality

1995-12-27

1999-09-21

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438681, 438683, 4272552, H01L 214763

Patent

active

059566132

ABSTRACT:
A method of depositing a low carbon content, high density TiN thin film on a substrate. A substrate is placed within a deposition chamber, and the pressure within the deposition chamber is adjusted to the deposition pressure. A portion of the total thickness desired of the TiN thin film is deposited. The portion of the TiN thin film contains an amount of carbon. Carbon is scavenged from the portion of the TiN thin film deposited by introducing scavenger gases into the deposition chamber. The scavenger gases are chosen so as to be reactive with carbon. The pressure within the deposition chamber is adjusted to the scavenger pressure, and a plasma of the scavenger gases is created within the deposition chamber. The steps from deposition through scavenging are repeated until the desired thickness of TiN is deposited, and the substrate having the desired thickness of TiN deposited thereon is removed from the deposition chamber.

REFERENCES:
patent: 5010032 (1991-04-01), Tang et al.
patent: 5399379 (1995-03-01), Sandhu
patent: 5487922 (1996-01-01), Nieh et al.
patent: 5591671 (1997-01-01), Kim et al.
patent: 5747116 (1998-05-01), Sharan et al.

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