Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1996-03-15

1999-09-21

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438164, 438486, 438487, 438908, 438475, 117 8, H01L 21324, H01L 21336

Patent

active

059565810

ABSTRACT:
A method of manufacturing a semiconductor device, comprises the steps of: forming an amorphous silicon film on a substrate having an insulating surface; processing said amorphous silicon film by plasma of a gas that mainly contains hydrogen or helium; and giving an energy to said amorphous silicon film.

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patent: 5501989 (1996-03-01), Takayama et al.
Bonnel et al., "Polycrystalline Silicon Thin-Film Transistors With Two-Step Annealing Process", IEEE Electron Device Letters, vol. 14, No. 12, Dec. 1993, pp. 551-553.
Fuse et al., "Performance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH4 and Si2H6 Source Low Pressure Vapor Deposited a-Si Films With or Without Solid-Phase Crystallization", Solid State Phenomena, vols. 37-38, 1994, p. 5.

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