Method of manufacturing intermetal dielectrics for sub-half-micr

Details Method of manufacturing intermetal dielectrics for sub-half-micr Method of manufacturing intermetal dielectrics for sub-half-micr

1997-11-06

1999-07-06

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438631, 438706, H01L 2138, H01L 2131

Patent

active

059207914

ABSTRACT:
A method of gap filling in the intermetal dielectric layer is described. Semiconductor device structures are provided in and on a semiconductor substrate and covered with an insulating layer. A conducting layer is deposited overlying the insulating layer and patterned wherein a gap is formed between portions of the patterned conducting layer. In a deposition chamber, the following steps are repeated until the gap is completely filled: a) depositing an oxide layer over the patterned conducting layer wherein an oxide overhang is formed on either side of the gap, and b) etching away the oxide overhang. The second conducting layer may now be deposited and patterned completing the fabrication of the integrated circuit device.

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