Magnetic random access memory having stacked memory cells and fa

Details Magnetic random access memory having stacked memory cells and fa Magnetic random access memory having stacked memory cells and fa

1996-08-23

1999-07-06

Saadat, Mahshid

Static information storage and retrieval

Systems using particular element

Magnetic thin film

257108, 257295, 257427, 365171, 365174, 365180, G11C 1115

Patent

active

059205008

ABSTRACT:
A magnetic random access memory (10) has a plurality of stacked memory cells on semiconductor substrate (11), each cell basically having a portion of magnetic material (12), a word line (13), and sense line (14). Upper sense line (22) is electrically coupled to lower sense line (12) via conductor line (23) with ohmic contacts. In order to read and store states in the memory cell, lower and upper word lines (13, 18) are activated, thereby total magnetic field is applied to portion of magnetic material (11). This stacked memory structure allows magnetic random access memory (10) to integrate more memory cells on semiconductor substrate (11).

REFERENCES:
patent: 4455626 (1984-06-01), Lutes
patent: 5347485 (1994-09-01), Taguchi et al.
patent: 5398200 (1995-03-01), Mazure et al.
patent: 5587943 (1996-12-01), Torok et al.
patent: 5617071 (1997-04-01), Daughton

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