Method of manufacturing both low and high voltage BiCMOS transis

Details Method of manufacturing both low and high voltage BiCMOS transis Method of manufacturing both low and high voltage BiCMOS transis

1991-09-23

1992-10-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437 57, 148DIG9, H01L 21331, H01L 2176

Patent

active

051584638

ABSTRACT:
The present invention relates to a semiconductor device which has not only high performance memory and logic by forming the low voltage and high voltage BiCMOS transistors in the same single semiconductor substrate, but also various functions and driving voltages by increasing the output power and noise margin, wherein the miniaturization of electronic products can be achieved by forming the low and high voltage BiCMOS transistors with various functions and also can achieve the high speed operation since a signal processing speed becomes fast.

REFERENCES:
patent: 4403395 (1983-09-01), Curran
patent: 4628341 (1986-12-01), Thomas
patent: 4908328 (1990-03-01), Hu et al.
patent: 5034337 (1991-07-01), Mosher et al.

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