Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-30
1999-07-06
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257382, 257623, H01L 2976, H01L 2994
Patent
active
059201029
ABSTRACT:
A semiconductor device (10) is formed in a pedestal structure (16) overlying an epitaxial layer (12) and a semiconductor substrate (11). The semiconductor device (10) includes a doped region (13) that forms a PN junction with the epitaxial layer (12). The semiconductor device (10) also includes a dielectric layer (22) that has an opening (23) that exposes a portion of the doped region (13) and an opening (24) that exposes a portion of the epitaxial layer (12). The openings (23, 24) are filled with a conductive material (36, 37) to provide contacts (100, 101). Due to the presence of the PN junction, the contacts (100, 101) are capacitively coupled to each other.
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Davies Robert B.
Wild Andreas A.
Zdebel Peter J.
Collopy Daniel R.
Martin-Wallace Valencia
Motorola Inc.
Seddon Kenneth M.
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