Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-30
1999-07-06
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257354, 438180, 365182, H01L 2701
Patent
active
059200952
ABSTRACT:
A semiconductor device (10) is formed in a pedestal structure (16) overlying a semiconductor substrate (11). The semiconductor device (10) includes a source region (44) and a drain region (45) that contact the corners (13) of the pedestal structure (16). Electrical connection to the source region (44) and the drain region (45) is provided by a conductive layer (28) that contacts the sides (12) and corners (13) of the pedestal structure (16).
REFERENCES:
patent: 4198252 (1980-04-01), Hsu
patent: 4371955 (1983-02-01), Sasaki
patent: 4545109 (1985-10-01), Reichart
patent: 4697198 (1987-09-01), Komari et al.
patent: 5021845 (1991-06-01), Hashimoto
patent: 5395773 (1995-03-01), Ravindhran et al.
patent: 5434093 (1995-07-01), Chau et al.
H.Lin et al., "Computer Analysis of the Double-Diffused MOS Transitor for Integrated Circuits," Transactions on Electron Devices, vol. ED-20, No. 3, Mar. 1973, pp. 275-282.
S. Shimizu et al., "O.15 .mu.m CMOS Process for High Performance and High Reliability," IEEE 1994, San Francisco, CA, pp. 67-70.
K. Lee et al., "Room Temperature 0.1.mu.m CMOS Technology with 11.8 ps Gate Delay," IEEE 1993, Washington, DC, pp. 131-134.
Davies Robert Bruce
Zdebel Peter J.
Chaudhuri Olik
Collopy Daniel R.
Motorola Inc.
Seddon Kenneth M.
Wille Douglas A.
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