Short channel field effect semiconductor device and method of ma

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257354, 438180, 365182, H01L 2701

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active

059200952

ABSTRACT:
A semiconductor device (10) is formed in a pedestal structure (16) overlying a semiconductor substrate (11). The semiconductor device (10) includes a source region (44) and a drain region (45) that contact the corners (13) of the pedestal structure (16). Electrical connection to the source region (44) and the drain region (45) is provided by a conductive layer (28) that contacts the sides (12) and corners (13) of the pedestal structure (16).

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S. Shimizu et al., "O.15 .mu.m CMOS Process for High Performance and High Reliability," IEEE 1994, San Francisco, CA, pp. 67-70.
K. Lee et al., "Room Temperature 0.1.mu.m CMOS Technology with 11.8 ps Gate Delay," IEEE 1993, Washington, DC, pp. 131-134.

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