Semiconductor device ROM having an offset region

Details Semiconductor device ROM having an offset region Semiconductor device ROM having an offset region

1992-01-28

1993-05-25

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257622, 257387, 365104, G11C 1700, H01L 2710, H01L 2906

Patent

active

052143031

ABSTRACT:
A semiconductor device including: a semiconductor substrate, a gate electrode formed on the substrate, a pair of source/drain regions provided in the substrate, and an offset step portion formed in at least one of the source/drain regions and downwardly extending into the substrate in the vicinity of the gate electrode.

REFERENCES:
patent: 4380866 (1983-04-01), Countryman, Jr. et al.
patent: 4964080 (1990-10-01), Tzeng

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