Bit line powered translinear memory cell

Details Bit line powered translinear memory cell Bit line powered translinear memory cell

1981-10-27

1984-04-10

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Flip-flop

365175, G11C 1300

Patent

active

044425090

ABSTRACT:
A bit line powered translinear memory cell includes a pair of NPN transistors Q101 and Q102 having cross-coupled bases and collectors. Diode loads D101 and D102 couple the NPN transistors Q101 and Q102 to the bit lines 301 and 302. The emitters of the two transistors Q101 and Q102 are coupled together and to a word line 103. Cell parasitic capacitances C101 and C102 are used to maintain data in nonaddressed memory cells during reading of other cells coupled to the same word line 103.

REFERENCES:
patent: 4023148 (1977-05-01), Heuber et al.
patent: 4091461 (1978-05-01), Booher
IBM Tech. Dis. Bul. vol. 23 no. 1 Jun. 1980 "Memory Cell Adopted for Different Combinations of Simultaneous Read and Write Operations" by Cavaliere pp. 180-186.

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