Method of forming a tungsten plug of a semiconductor device

Details Method of forming a tungsten plug of a semiconductor device Method of forming a tungsten plug of a semiconductor device

1996-11-14

1999-07-27

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438636, 438648, 438672, 438906, H01L 2128

Patent

active

059306700

ABSTRACT:
The present invention relates to a method of forming a tungsten plug of a semiconductor device. After forming the tungsten plug in the contact hole, a tungsten residue existed in a portion except a contact hole is oxidized by oxidation and removed. The oxidation process is performed using a chemical mixture of hydrogen peroxide and ultrapure water. A metal wiring pattern including a reflection prevention layer can also be provided on the tungsten plug prior to the residue oxidation and removal.

REFERENCES:
patent: 4963511 (1990-10-01), Smith
patent: 5164330 (1992-11-01), Davis et al.
patent: 5260232 (1993-11-01), Muroyama et al.
patent: 5312775 (1994-05-01), Fujii et al.
patent: 5326723 (1994-07-01), Petro et al.
patent: 5364817 (1994-11-01), Lur et al.
patent: 5521119 (1996-05-01), Chen et al.
patent: 5554254 (1996-09-01), Huang et al.
patent: 5730834 (1998-03-01), Gabriel
Takayuki Ohba, "Chemical-Vapor-Deposited Tungsten for Vertical Wiring"; MRS Bulletin, pp. 46-52; Nov. 1995.

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