Nonvolatile reprogrammable interconnect cell with FN tunneling i

Details Nonvolatile reprogrammable interconnect cell with FN tunneling i Nonvolatile reprogrammable interconnect cell with FN tunneling i

1997-03-31

1998-11-17

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257326, 36518521, H01L 29788

Patent

active

058380400

ABSTRACT:
Disclosed is a FPGA cell and array structure which use FN tunneling for program and erase. Each cell comprises a switch floating gate field effect transistor and a sense floating gate field effect transistor with the floating gates being common and the control gates being common. Programming of a cell is effected by voltage biasing the common control gate line and the source/drains of the sense transistor.

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