Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1996-08-22
1998-11-17
Dote, Janis L.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430316, 216 47, 428142, 428585, 428671, 428713, 428717, 428721, 428725, 428950, 428952, G03F 700, G03F 726
Patent
active
058374280
ABSTRACT:
A method for forming a patterned layer within an integrated circuit. There is first provided a substrate having formed thereupon a blanket target layer. Formed upon the blanket target layer is a blanket focusing layer, where the blanket focusing layer is formed from an organic material and where the blanket focusing layer is susceptible to a reproducible negative etch bias within a first etch method employed in etching the blanket focusing layer to form a patterned focusing layer. There is then formed upon the blanket focusing layer a blanket photoresist layer which is photoexposed and developed to form a patterned photoresist layer. There is then etched through the first etch method the blanket focusing layer to form the patterned focusing layer while employing the patterned photoresist layer as a first etch mask layer. The patterned focusing layer so formed has the reproducible negative etch bias with respect to the patterned photoresist layer. Finally, the blanket target layer is etched through a second etch method to form a patterned target layer while employing the patterned focusing layer as a second etch mask layer. When: (1) the patterned photoresist layer has a linewidth dimension about 0.33 to about 0.35 microns; (2) the reproducible negative etch bias is from about -0.07 to about -0.09 microns; and (3) the second etch method does not have a reproducible second etch bias which substantially compensates the reproducible negative etch, a patterned target layer, such as a gate electrode within a field effect transistor (FET), of linewidth dimension as narrow as about 0.25 microns may be obtained.
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Huang Yuan-Chang
Yang Shu-Chih
Ackerman Stephen B.
Dote Janis L.
Saile George O.
Szecsy Alek P.
Taiwan Semiconductor Manufacturing Compnay Ltd.
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