Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-12-18
1999-07-27
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257346, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
059294965
ABSTRACT:
A method and structure are provided for an IGFET which has a highly scalable short conduction channel length. The short channel IGFET functions more rapidly than do longer conduction channel devices. Lightly doped regions provide a graded extension or buffer region to the conduction channel. Thus, the voltage drop is shared by the source/drain and channel, in contrast to an abrupt n+/p junction where the almost the entire voltage drop occurs across the lightly doped (channel) side of the junction. This method and structure preserves the integrity of the IGFET by protecting the gate from "hot electron injection." The method and structure provide an IGFET with increased performance without compromising the IGFET's reliability or longevity.
REFERENCES:
patent: 4149904 (1979-04-01), Jones
patent: 4682404 (1987-07-01), Miller et al.
patent: 5146291 (1992-09-01), Watabe et al.
patent: 5427971 (1995-06-01), Lee et al.
patent: 5614739 (1997-03-01), Abrokwah et al.
patent: 5623153 (1997-04-01), Liang et al.
Gardner Mark I.
Paiz Robert
Spikes, Jr. Thomas E.
LandOfFree
Method and structure for channel length reduction in insulated g does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and structure for channel length reduction in insulated g, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure for channel length reduction in insulated g will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-881841