Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-04-17
1999-07-27
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257349, 257352, 257382, 257374, H01L 2701
Patent
active
059294906
ABSTRACT:
The present invention provides a contact hole structure in a field effect transistor having a semiconductor layer extending over an insulation region, a control electrode provided on an insulation film on the semiconductor layer, and an inter-layer insulator covering the semiconductor layer and the control electrode. The semiconductor layer further comprises a drain region of a first conductivity type extending on the insulation region, an intermediate region of a second conductivity type extending on the insulation region and also being in contact with the drain region so that the intermediate region is positioned under the control electrode, and a laminated region in contact with the intermediate region so that the laminated region is separated by the intermediate region from the drain region. The laminated region comprises a base layer of the second conductivity type on the insulation region and a source region of the first conductivity type laminated on the base layer. The contact hole structure comprises at least a first contact hole filled with a first contact layer and formed in the inter-layer insulator so that the first contact hole reaches a top surface of the source region, at least a second contact hole filled with a second contact layer and formed in the inter-layer insulator so that the second contact hole penetrates through the source region to reach the base layer, and an electrical isolation layer provided on an inner wall of at least a part of the second contact hole so that the second contact layer within the second contact hole is electrically isolated by the electrical isolation layer from the source region.
REFERENCES:
patent: 5489792 (1996-02-01), Hu et al.
NEC Corporation
Tran Minh Loan
LandOfFree
Semiconductor device with an improved body contact hole structur does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with an improved body contact hole structur, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with an improved body contact hole structur will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-881792