Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-06-04
1994-05-17
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
3072961, 3072967, 307570, H01L 2702, H03K 301
Patent
active
053130855
ABSTRACT:
A voltage reduction circuit is electrically inserted between between a first power supply pad and a power source voltage supplying portion of a bipolar circuit part. Receiving a control signal from a CMOS circuit part, the voltage reduction circuit reduces a power source voltage given thereto via the power supply pad, thereby producing a reduced power source voltage and outputting the reduced power source voltage to the power source voltage supplying portion of the bipolar circuit part. Hence, even though the same power source voltage is commonly supplied to the power supply pads of the bipolar circuit part and the CMOS circuit part via the same external power source pin, one of the bipolar circuit part and the CMOS circuit part receives the reduced power source voltage from the voltage reduction circuit. Thus, it is possible that a power source voltage to the CMOS circuit part and a power source voltage to the bipolar circuit part are different without increasing the number of external power source pins.
REFERENCES:
patent: 5149988 (1992-09-01), Smith et al.
Mitsubishi Denki & Kabushiki Kaisha
Wojciechowicz Edward
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