Method for manufacturing thin film

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

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H01L 2120, H01L 2136

Patent

active

059279940

ABSTRACT:
A method of manufacturing thin films by plasma CVD is described. This method comprises supplying power to a power electrode in a way such that a self-bias upon plasma discharge of the power applying electrode, which is situated in a plasma discharge space, is a positive potential relative to a ground electrode.

REFERENCES:
patent: 4400409 (1983-08-01), Izu et al.
patent: 4690746 (1987-09-01), McInerny et al.
patent: 4767641 (1988-08-01), Kieser et al.
patent: 5102523 (1992-04-01), Beiswenger et al.
patent: 5763937 (1997-07-01), Jain et al.

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