Semiconductor device having a CMOS current mirror circuit

Details Semiconductor device having a CMOS current mirror circuit Semiconductor device having a CMOS current mirror circuit

1999-02-11

1999-12-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257290, 257292, 257379, 2503384, 25037015, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

060021578

ABSTRACT:
In a photoelectric conversion device driven by a current mirror circuit, the current mirror circuit is constituted by four transistors, e.g., first and second PMOS transistors and first and second NMOS transistors. A photodiode which has a cathode connected to the drain of the second PMOS transistor and receives reverse bias is arranged. Electrons generated in the photodiode can prevent potential rise of a node connected to the photodiode to normally operate the photoelectric conversion device even upon irradiation of light.

REFERENCES:
patent: 5453629 (1995-09-01), Gofuku et al.
patent: 5481124 (1996-01-01), Koruka et al.
patent: 5677201 (1997-10-01), Koruka et al.
patent: 5705807 (1998-01-01), Throngnumchai et al.
patent: 5861655 (1999-01-01), Koruka et al.
patent: 5896043 (1999-04-01), Kumagai
Gregorian et al., "Analog MOS Integrated Circuits for Signal Processing", MOS Operational Amplifiers, pp. 121-131, Wiley & Sons, 1986.

Affiliated with

Also associated with

Rating

Semiconductor device having a CMOS current mirror circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a CMOS current mirror circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a CMOS current mirror circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-865995