High-frequency MOSFET

Details High-frequency MOSFET High-frequency MOSFET

1998-07-08

1999-12-14

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257348, 257349, 257350, 257351, 257352, 257353, 257354, 257 59, 257 72, H01L 2940

Patent

active

060021543

ABSTRACT:
A high frequency MOSFET device includes a Silicon-On-Insulator substrate. The MOSFET device has a source electrode connected to the substrate by a conductive region penetrating the insulator layer for dissipating heat from the drive section of an MOSFET to the substrate. The conductive region may be in a grid pattern or lattice configuration, surrounding the drive section of each MOSFET on the SOI substrate, opposite the source electrode of the MOSFET.

REFERENCES:
Hisamoto et al.; "Advanced 0.1 .mu.m CMOS for RF Application", Technical Report of IEICE, ICD96-86 (1996-07) pp. 15-19.
Schmitz et al.; "A Deep-Submicrometer Microwave/Digital CMOS/SOS Technology", IEEE Electron Device Letters, vol. 12, No. 1, Jan. 1991, pp. 16-17.

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