Non-volatile trench semiconductor device

Details Non-volatile trench semiconductor device Non-volatile trench semiconductor device

1997-12-18

1999-12-14

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257324, H01L 2976, H01L 2988, H01L 2992

Patent

active

060021519

ABSTRACT:
A non-volatile memory device is formed in a substrate, thereby enabling increased densification. Embodiments include forming a trench in a substrate, forming a substantially U-shaped tunnel dielectric layer in the trench, depositing a substantially U-shaped floating gate electrode on the tunnel dielectric layer, forming a dielectric layer on the floating gate electrode extending on the substrate surface and forming a substantially T-shaped control gate electrode filling the trench and extending on the substrate. Sidewall spacers are formed on side surfaces of the control gate electrode and dielectric layer, followed by ion implantation to form source/drain regions extending into the substrate to substantially the same depth, leaving a region containing an impurity of the first conductivity type at the intersection of the trench and substrate surface which prevents shorting between the source/drain region and gate electrodes.

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