Method for forming semiconductor device with bottom gate connect

Details Method for forming semiconductor device with bottom gate connect Method for forming semiconductor device with bottom gate connect

1995-06-05

1998-09-15

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438638, H01L 2154

Patent

active

058077723

ABSTRACT:
In a field effect type device having a thin film-like active layer, there is provided a thin film-like semiconductor device including a top side gate electrode on the active layer and a bottom side gate electrode connected to a static potential, the bottom side gate electrode being provided between the active layer and a substrate. The bottom side gate electrode may be electrically connected to only one of a source and a drain of the field effect type device. Also, the production methods therefor are disclosed.

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K. Ishii et al., Jpn. J. Appl. Phys. 29(4) (1990) L521 "Experimental fabrication of XMOS transistors", Apr. 1990.

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