Field effect transistor having dielectrically isolated sources a

Details Field effect transistor having dielectrically isolated sources a Field effect transistor having dielectrically isolated sources a

1997-03-12

1999-01-05

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 51, 257371, H01L 2978, H01L 2904, H01L 27092

Patent

active

058566961

ABSTRACT:
A field-effect transistor structure is described having a monocrystalline silicon channel region which is epitaxially continuous with an underlying monocrystalline silicon body region. Polycrystalline silicon source and drain regions abut the channel region. The source and drain regions are electrically isolated from the underlying body region by a patterned dielectric layer, which may include a thick field oxide. A polycrystalline silicon gate is capacitively coupled with the channel region by a second dielectric layer. The gate may extend laterally to partly overlap the source and drain regions.

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