Semiconductor integrated circuit device containing MOS protectio

Details Semiconductor integrated circuit device containing MOS protectio Semiconductor integrated circuit device containing MOS protectio

1995-08-18

1999-01-05

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257355, 257382, H01L 2978, H01L 2362

Patent

active

058566937

ABSTRACT:
A semiconductor integrated circuit device containing a protection MOSFET. This MOSFET has source and drain regions and a channel region formed in a semiconductor substrate. The channel region is disposed between the source and drain regions. The source region is made of a first lightly doped region and a first heavily doped region. The first lightly doped region is adjacent to a first end of the channel region. The drain region is made of a second lightly doped region and a second heavily doped region. The second lightly doped region is adjacent to a second end of the channel region. The second end of the channel region is positioned on an opposite side to that of the first end. A distance from the second end of the channel region to an opposing end of the second heavily doped region is longer than a distance from the first end of the channel region to an opposing end of the first heavily doped region. Even if the snapback voltage of the MOSFET fluctuates from place to place in the same MOSFET, the snapback phenomenon tends to occur within the entire drain region almost simultaneously, enabling to improve the ESD breakdown resistance of the protection MOSFET.

REFERENCES:
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T.L. Polgreen et al., "Improving the ESD Failure Threshold of Silicided n-MOS Output Transistors by Ensuring Uniform Current Flow", IEEE Transactions on Electronic Devices, vol. 39, No. 2, Feb. 1992, pp. 379-388 .

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